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Electronic structure and phase stability of oxide semiconductors: Performance of dielectric-dependent hybrid functional DFT, benchmarked against $GW$ band structure calculations and experiments

机译:氧化物半导体的电子结构和相稳定性:   基于电介质的混合功能DFT的性能,基准测试   反对$ GW $带结构的计算和实验

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摘要

We investigate band gaps, equilibrium structures, and phase stabilities ofseveral bulk polymorphs of wide-gap oxide semiconductors ZnO, TiO2,ZrO2, andWO3. We are particularly concerned with assessing the performance of hybridfunctionals built with the fraction of Hartree-Fock exact exchange obtainedfrom the computed electronic dielectric constant of the material. We providecomparison with more standard density-functional theory and GW methods. Wefinally analyze the chemical reduction of TiO2 into Ti2O3, involving a changein oxide stoichiometry. We show that the dielectric-dependent hybrid functionalis generally good at reproducing both ground-state (lattice constants, phasestability sequences, and reaction energies) and excited-state (photoemissiongaps) properties within a single, fully ab initio framework.
机译:我们研究了宽带隙氧化物半导体ZnO,TiO2,ZrO2和WO3的几个本体多晶型的带隙,平衡结构和相稳定性。我们特别关注评估使用从计算出的材料电子介电常数获得的Hartree-Fock精确交换的分数构建的混合功能的性能。我们提供了更多标准密度函数理论和GW方法的比较。我们最终分析了将TiO2还原为Ti2O3的化学还原过程,其中涉及到化学计量的变化。我们表明介电依赖性混合功能通常擅长在单个完全从头开始的框架中同时复制基态(晶格常数,相稳定性序列和反应能)和激发态(光发射间隙)特性。

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